InAs Quantum Dots in Symmetric InGaAs/GaAs Quantum Wells

The self-assembled InAs quantum dots (QDs) are the subject of substantial interest during last fifteen years due to both fundamental scientific and application reasons. In these systems, the strong localization of an electronic wave function leads to an atomic-like electronic density of states and permits to realize the novel and improved photonic and electronic devices. Microlectronic and optoelectronic devices based on quantum wells (QWs) with InAs QDs have been the subject of investigation for the applications in semiconductor lasers for the optical fiber communication [1-3], infrared photo-detectors [46], electronic memory devices [7,8], as well as single electron devices and single photon light sources on the base of single-QD structures for the quantum information applications [9-12]. QDs are especially attractive for the applications in semiconductor lasers. For laser or photodiode applications the surface density of QDs has to be high, but for single-QD devices the QD density has to be low. As a result, there is an extensive effort to manipulate and control the position, size, shape and density of QDs [13-19].